Features: • Trench + Field Stop IGBT® Technology- Low voltage drop- Low tail current- Switching frequency up to 20 kHz- Soft recovery parallel diodes- Low diode VF- Low leakage current- Avalanche energy rated- RBSOA and SCSOA rated• Kelvin emitter for easy drive• Very low str...
APTGT200H60: Features: • Trench + Field Stop IGBT® Technology- Low voltage drop- Low tail current- Switching frequency up to 20 kHz- Soft recovery parallel diodes- Low diode VF- Low leakage current- Av...
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Symbol | Parameter | Max ratings | Unit | |
VCES | Collector - Emitter Breakdown Voltage | 600 | V | |
IC | Continuous Collector Current | TC = 25°C | 290 | A |
TC = 80°C | 200 | |||
ICM | Pulsed Collector Current | TC = 25°C | 400 | A |
VGE | Gate Emitter Voltage | ±20 | V | |
PD | Maximum Power Dissipation | TC = 25°C | 625 | W |
RBSOA | Reverse Bias Safe Operation Area | Tj = 150°C | 400A @ 550V |