Features: • Non Punch Through (NPT) fast IGBT- Low voltage drop- Low tail current- Switching frequency up to 50 kHz- Soft recovery parallel diodes- Low diode VF- Low leakage current- Avalanche energy rated- RBSOA and SCSOA rated• Kelvin emitter for easy drive• Low stray inductanc...
APTGF660U60D4: Features: • Non Punch Through (NPT) fast IGBT- Low voltage drop- Low tail current- Switching frequency up to 50 kHz- Soft recovery parallel diodes- Low diode VF- Low leakage current- Avalanche...
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Symbol | Parameter | Max ratings | Unit | |
VCES | Collector - Emitter Breakdown Voltage | 600 | V | |
IC | Continuous Collector Current | TC = 25°C | 825 | A |
TC = 80°C | 660 | |||
ICM | Pulsed Collector Current | TC = 25°C | 1100 | A |
VGE | Gate Emitter Voltage | +20 | V | |
PD | Maximum Power Dissipation | TC = 25°C | 2770 | W |
RBSOA | Reverse Bias Safe Operation Area | Tj = 125°C | 1100A@520V |