APTC80H29T3G

Series: -
FET Feature: Standard
Mounting Type: Chassis Mount
Manufacturer: Microsemi Power Products Group
FET Type: 4 N-Channel (H-Bridge)
Packaging: Bulk
Drain to Source Voltage (Vdss): 800V
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Package / Case: SP3
Supplier Device Package: SP3
Current - Continuous Drain (Id) @ 25° C: 15A
Rds On (Max) @ Id, Vgs: 290 mOhm @ 7.5A, 10V
Gate Charge (Qg) @ Vgs: 90nC @ 10V
Input Capacitance (Ciss) @ Vds: 2254pF @ 25V
Power - Max: 156W


Features:

- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration


Application

• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies


Specifications

VCES	Collector - Emitter Breakdown Voltage		800	V
ID	Continuous Collector Current	TC = 25°C	15	A
		TC = 80°C	11
IDM	Pulsed Collector Current		60
VGS	Gate Emitter Voltage		±30	V
RBSOA	Reverse Bias Safe Operating Area		290	mΩ
PD	Maximum Power Dissipation	TC = 25°C	156	W
IAR	Avalanche current (repetitive and non repetitive)		17	A
EAR	Repetitive Avalanche Energy		0.5	mJ
EAS	Single Pulse Avalanche Energy		670

Parameters:

Technical/Catalog Information	APTC80H29T3G
Vendor	Microsemi-PPG
Category	Discrete Semiconductor Products
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	APTC80H29T3G APTC80H29T3G