APTC80DSK29T3G

Series: -
FET Feature: Standard
Mounting Type: Chassis Mount
Manufacturer: Microsemi Power Products Group
Packaging: Bulk
Drain to Source Voltage (Vdss): 800V
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Package / Case: SP3
Supplier Device Package: SP3
FET Type: 2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25° C: 15A
Rds On (Max) @ Id, Vgs: 290 mOhm @ 7.5A, 10V
Gate Charge (Qg) @ Vgs: 90nC @ 10V
Input Capacitance (Ciss) @ Vds: 2254pF @ 25V
Power - Max: 156W


Features:

•
- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration


Application

• AC and DC motor control
• Switched Mode Power Supplies


Specifications

Symbol	Parameter		Max ratings	Unit
VDSS	Drain - Source Breakdown Voltage		800	V
ID	Continuous Drain Current	Tc = 25°C Tc = 80°C	15 11	A
IDM VGS RDSon	Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance		60 ±30 290	A V mΩ
PD	Maximum Power Dissipation	Tc = 25°C	156	W
IAR EAR EAS	Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy		17 0.5 670	A mJ

Parameters:

Technical/Catalog Information	APTC80DSK29T3G
Vendor	Microsemi-PPG
Category	Discrete Semiconductor Products
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	APTC80DSK29T3G APTC80DSK29T3G