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APTC60DAM35T1G

MOSFET N-CH 600V 72A SP1

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SeekIC No. : 004130880 Detail

APTC60DAM35T1G: MOSFET N-CH 600V 72A SP1

APTC60DAM35T1G Data Sheet

floor Price/Ceiling Price

US $ 29.37~29.37 / Piece | Get Latest Price
Part Number:
APTC60DAM35T1G
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~19
  • Unit Price
  • $29.37
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/5/22

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Product Details

Quick Details

Series: - Manufacturer: Microsemi Power Products Group
FET Type: MOSFET N-Channel, Metal Oxide FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25° C: 72A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 72A, 10V Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Gate Charge (Qg) @ Vgs: 518nC @ 10V Input Capacitance (Ciss) @ Vds: 14000pF @ 25V
Power - Max: 416W Package / Case : PGBA-516
Mounting Type: Chassis Mount Package / Case: SP1
Supplier Device Package: SP1    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Mounting Type: Chassis Mount
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25° C: 72A
Manufacturer: Microsemi Power Products Group
Input Capacitance (Ciss) @ Vds: 14000pF @ 25V
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Packaging: Bulk
Package / Case: SP1
Supplier Device Package: SP1
Rds On (Max) @ Id, Vgs: 35 mOhm @ 72A, 10V
Gate Charge (Qg) @ Vgs: 518nC @ 10V
Power - Max: 416W
FET Feature: Logic Level Gate


Parameters:

Technical/Catalog InformationAPTC60DAM35T1G
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Mounting TypeChassis Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C72A
Rds On (Max) @ Id, Vgs35 mOhm @ 72A, 10V
Input Capacitance (Ciss) @ Vds 14000pF @ 25V
Power - Max416W
PackagingBulk
Gate Charge (Qg) @ Vgs518nC @ 10V
Package / CaseSP1 Module
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names APTC60DAM35T1G
APTC60DAM35T1G



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