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APT7M120B

MOSFET N-CH 1200V 8A TO247

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SeekIC No. : 003432627 Detail

APT7M120B: MOSFET N-CH 1200V 8A TO247

APT7M120B Data Sheet

floor Price/Ceiling Price

US $ 2.15~4.39 / Piece | Get Latest Price
Part Number:
APT7M120B
Mfg:
Supply Ability:
5000

Price Break

  • Qty
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  • 10~100
  • 100~250
  • 250~500
  • 500~1000
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  • 2500~5000
  • 5000~10000
  • Unit Price
  • $4.39
  • $3.95
  • $3.25
  • $2.98
  • $2.72
  • $2.37
  • $2.28
  • $2.19
  • $2.15
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Product Details

Quick Details

Series: - Manufacturer: Microsemi Power Products Group
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV)
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 8A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 3A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) @ Vgs: 80nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 2565pF @ 25V
Power - Max: 335W Mounting Type: Through Hole
Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 8A
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 80nC @ 10V
Package / Case: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 1mA
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Manufacturer: Microsemi Power Products Group
Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 3A, 10V
Supplier Device Package: TO-247 [B]
Input Capacitance (Ciss) @ Vds: 2565pF @ 25V
Power - Max: 335W


Parameters:

Technical/Catalog InformationAPT7M120B
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25° C7A
Rds On (Max) @ Id, Vgs2.5 Ohm @ 3A, 10V
Input Capacitance (Ciss) @ Vds 2565pF @ 25V
Power - Max335W
PackagingTube
Gate Charge (Qg) @ Vgs80nC @ 10V
Package / CaseTO-247
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names APT7M120B
APT7M120B
APT7M120BMI ND
APT7M120BMIND
APT7M120BMI



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