APT6M100K

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 6A
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Gate Charge (Qg) @ Vgs: 43nC @ 10V
Drain to Source Voltage (Vdss): 1000V (1kV)
Vgs(th) (Max) @ Id: 5V @ 1mA
Manufacturer: Microsemi Power Products Group
Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 3A, 10V
Input Capacitance (Ciss) @ Vds: 1410pF @ 25V
Power - Max: 225W
Supplier Device Package: TO-220 [K]


Parameters:

Technical/Catalog Information	APT6M100K
Vendor	Microsemi-PPG
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25° C	6A
Rds On (Max) @ Id, Vgs	2.5 Ohm @ 3A, 10V
Input Capacitance (Ciss) @ Vds	1410pF @ 25V
Power - Max	225W
Packaging	Tube
Gate Charge (Qg) @ Vgs	43nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	APT6M100K APT6M100K APT6M100KMI ND APT6M100KMIND APT6M100KMI