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APT66M60B2

MOSFET N-CH 600V 66A T-MAX

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SeekIC No. : 003431961 Detail

APT66M60B2: MOSFET N-CH 600V 66A T-MAX

APT66M60B2 Data Sheet

floor Price/Ceiling Price

US $ 7.1~10.22 / Piece | Get Latest Price
Part Number:
APT66M60B2
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • 250~500
  • Unit Price
  • $10.22
  • $9.46
  • $8.05
  • $7.41
  • $7.1
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Series: - Manufacturer: Microsemi Power Products Group
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 600V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 70A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 100 mOhm @ 33A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) @ Vgs: 330nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 13190pF @ 25V
Power - Max: 1135W Mounting Type: Through Hole
Package / Case: TO-247-3 Variant Supplier Device Package: T-MAX? [B2]    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Packaging: Tube
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25° C: 70A
Gate Charge (Qg) @ Vgs: 330nC @ 10V
Manufacturer: Microsemi Power Products Group
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power - Max: 1135W
Package / Case: TO-247-3 Variant
Supplier Device Package: T-MAX? [B2]
Input Capacitance (Ciss) @ Vds: 13190pF @ 25V
Rds On (Max) @ Id, Vgs: 100 mOhm @ 33A, 10V


Parameters:

Technical/Catalog InformationAPT66M60B2
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C66A
Rds On (Max) @ Id, Vgs100 mOhm @ 33A, 10V
Input Capacitance (Ciss) @ Vds 13190pF @ 25V
Power - Max1135W
PackagingTube
Gate Charge (Qg) @ Vgs330nC @ 10V
Package / CaseT-MAX
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names APT66M60B2
APT66M60B2
APT66M60B2MI ND
APT66M60B2MIND
APT66M60B2MI



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