APT66M60B2

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Packaging: Tube
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25° C: 70A
Gate Charge (Qg) @ Vgs: 330nC @ 10V
Manufacturer: Microsemi Power Products Group
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power - Max: 1135W
Package / Case: TO-247-3 Variant
Supplier Device Package: T-MAX? [B2]
Input Capacitance (Ciss) @ Vds: 13190pF @ 25V
Rds On (Max) @ Id, Vgs: 100 mOhm @ 33A, 10V


Parameters:

Technical/Catalog Information	APT66M60B2
Vendor	Microsemi-PPG
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	66A
Rds On (Max) @ Id, Vgs	100 mOhm @ 33A, 10V
Input Capacitance (Ciss) @ Vds	13190pF @ 25V
Power - Max	1135W
Packaging	Tube
Gate Charge (Qg) @ Vgs	330nC @ 10V
Package / Case	T-MAX
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	APT66M60B2 APT66M60B2 APT66M60B2MI ND APT66M60B2MIND APT66M60B2MI