APT60M80L2VRG

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25° C: 65A
Packaging: Tube
Mounting Type: Through Hole
Manufacturer: Microsemi Power Products Group
Package / Case: TO-264-3, TO-264AA
Series: POWER MOS V®
Power - Max: 833W
Supplier Device Package: 264 MAX? [L2]
Gate Charge (Qg) @ Vgs: 590nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 5mA
Rds On (Max) @ Id, Vgs: 80 mOhm @ 32.5A, 10V
Input Capacitance (Ciss) @ Vds: 13300pF @ 25V


Parameters:

Technical/Catalog Information	APT60M80L2VRG
Vendor	Microsemi-PPG
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	65A
Rds On (Max) @ Id, Vgs	80 mOhm @ 32.5A, 10V
Input Capacitance (Ciss) @ Vds	13300pF @ 25V
Power - Max	833W
Packaging	Tube
Gate Charge (Qg) @ Vgs	590nC @ 10V
Package / Case	TO-264
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	APT60M80L2VRG APT60M80L2VRG