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APT60M80L2VR

Features: • TO-264 MAX Package • 100% Avalanche Tested• Faster Switching• Lower LeakageSpecifications Symbol Parameter APT60M80L2VR UNIT VDSS Drain-Source Voltage 600 Volts ID Continuous Drain Current @ TC = 25 65 Amps IDM Pulsed Drain Cu...

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SeekIC No. : 004287522 Detail

APT60M80L2VR: Features: • TO-264 MAX Package • 100% Avalanche Tested• Faster Switching• Lower LeakageSpecifications Symbol Parameter APT60M80L2VR UNIT VDSS Drain-Source Vol...

APT60M80L2VR Data Sheet

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Part Number:
APT60M80L2VR
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/7/15

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Product Details

Description



Features:

• TO-264 MAX Package
• 100% Avalanche Tested
• Faster Switching
• Lower Leakage


Specifications

Symbol Parameter
APT60M80L2VR
UNIT
VDSS Drain-Source Voltage
600
Volts
ID Continuous Drain Current @ TC = 25
65
Amps
IDM Pulsed Drain Current
260
VGS Gate-Source Voltage
±30
Volts
VGSM Gate-Source Voltage Transient
±40
PD Total Power Dissipation @ TC = 25
830
Watts
Linear Derating Factor
6.64
W/
TJ,TSTG Operating and StorageTemperature Range
-55 to 150
TL Lead Temperature: 0.063" from Case for 10 Sec.
300
IAR Avalanche Current(Repetitive and Non-epetitive)
65
Amps
EAR Repetitive Avalanche Energy
50
mJ
EAS Single Pulse Avalanche Energy
3200








Description

Power MOS V® APT60M80L2VR is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.




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