APT60M80L2VR Selling Leads, Price trend, APT60M80L2VR DataSheet download, circuit diagram from SeekIC.com

Features: • TO-264 MAX Package • 100% Avalanche Tested• Faster Switching• Lower LeakageSpecifications Symbol Parameter APT60M80L2VR UNIT VDSS Drain-Source Voltage 600 Volts ID Continuous Drain Current @ TC = 25 65 Amps IDM Pulsed Drain Cu...

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SeekIC No. : 004287522 Detail

APT60M80L2VR: Features: • TO-264 MAX Package • 100% Avalanche Tested• Faster Switching• Lower LeakageSpecifications Symbol Parameter APT60M80L2VR UNIT VDSS Drain-Source Vol...

APT60M80L2VR Data Sheet

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Part Number:: APT60M80L2VR
Supply Ability:: 5000

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1~5000

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Negotiable

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Upload time: 2024/11/21

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Recent History
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APT6010B2FLLG evaluate
US $11.12 - 18.54 / Piece

MOSFET N-CH 600V 54A T-MAX
APT6010B2LL evaluate
Specifications Symbol Parameter APT6010 UNIT VDSS Drain-Source Voltage 600 Volts ...
APT6010B2LLG evaluate
US $10.38 - 17.3 / Piece

MOSFET N-CH 600V 54A T-MAX

Product Details

Description

Features:

• TO-264 MAX Package
• 100% Avalanche Tested
• Faster Switching
• Lower Leakage

Specifications

Symbol	Parameter	APT60M80L2VR	UNIT
V_DSS	Drain-Source Voltage	600	Volts
I_D	Continuous Drain Current @ T_C = 25	65	Amps
I_DM	Pulsed Drain Current	260	Amps
V_GS	Gate-Source Voltage	±30	Volts
V_GSM	Gate-Source Voltage Transient	±40	Volts
P_D	Total Power Dissipation @ T_C = 25	830	Watts
P_D	Linear Derating Factor	6.64	W/
T_J,T_STG	Operating and StorageTemperature Range	-55 to 150
T_L	Lead Temperature: 0.063" from Case for 10 Sec.	300
I_AR	Avalanche Current(Repetitive and Non-epetitive)	65	Amps
E_AR	Repetitive Avalanche Energy	50	mJ
E_AS	Single Pulse Avalanche Energy	3200	mJ

Description

Power MOS V^® APT60M80L2VR is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V^® also achieves faster switching speeds through optimized gate layout.

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APT60M80L2VR

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