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APT60M75L2LL

Features: • Lower Input Capacitance • Increased Power Dissipation• Lower Miller Capacitance • Easier To Drive• Lower Gate Charge, Qg • Popular TO-264 MAX PackageSpecifications Symbol Parameter APT60M75L2LL UNIT VDSS Drain-Source Voltage 600 ...

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SeekIC No. : 004287519 Detail

APT60M75L2LL: Features: • Lower Input Capacitance • Increased Power Dissipation• Lower Miller Capacitance • Easier To Drive• Lower Gate Charge, Qg • Popular TO-264 MAX PackageS...

APT60M75L2LL Data Sheet

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Part Number:
APT60M75L2LL
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

• Lower Input Capacitance
• Increased Power Dissipation
• Lower Miller Capacitance
• Easier To Drive
• Lower Gate Charge, Qg
• Popular TO-264 MAX Package


Specifications

Symbol Parameter
APT60M75L2LL
UNIT
VDSS Drain-Source Voltage
600
Volts
ID Continuous Drain Current @ TC = 25
73
Amps
IDM Pulsed Drain Current
292
VGS Gate-Source Voltage
±30
Volts
VGSM Gate-Source Voltage Transient
±40
PD Total Power Dissipation @ TC = 25
890
Watts
Linear Derating Factor
7.12
W/
TJ,TSTG Operating and StorageTemperature Range
-55 to 150
TL Lead Temperature: 0.063" from Case for 10 Sec.
300
IAR Avalanche Current(Repetitive and Non-epetitive)
73
Amps
EAR Repetitive Avalanche Energy
50
mJ
EAS Single Pulse Avalanche Energy
3200

 




Description

Power MOS 7TM APT60M75L2LL is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.




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