Features: • Lower Input Capacitance • Increased Power Dissipation• Lower Miller Capacitance • Easier To Drive• Lower Gate Charge, Qg • Popular TO-264 MAX PackageSpecifications Symbol Parameter APT60M75L2FLL UNIT VDSS Drain-Source Voltage 600 ...
APT60M75L2FLL: Features: • Lower Input Capacitance • Increased Power Dissipation• Lower Miller Capacitance • Easier To Drive• Lower Gate Charge, Qg • Popular TO-264 MAX PackageS...
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Specifications Symbol Parameter APT6010 UNIT VDSS Drain-Source Voltage 600 Volts ...
Symbol | Parameter |
APT60M75L2FLL |
UNIT |
VDSS | Drain-Source Voltage |
600 |
Volts |
ID | Continuous Drain Current @ TC = 25 |
73 |
Amps |
IDM | Pulsed Drain Current |
292 | |
VGS | Gate-Source Voltage |
±30 |
Volts |
VGSM | Gate-Source Voltage Transient |
±40 | |
PD | Total Power Dissipation @ TC = 25 |
890 |
Watts |
Linear Derating Factor |
7.12 |
W/ | |
TJ,TSTG | Operating and StorageTemperature Range |
-55 to 150 |
|
TL | Lead Temperature: 0.063" from Case for 10 Sec. |
300 | |
IAR | Avalanche Current(Repetitive and Non-epetitive) |
73 |
Amps |
EAR | Repetitive Avalanche Energy |
50 |
mJ |
EAS | Single Pulse Avalanche Energy |
3200 |
Power MOS 7TM APT60M75L2FLL is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.