APT60M75JLL

MOSFET N-CH 600V 58A SOT-227

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SeekIC No. : 004130756 Detail

APT60M75JLL: MOSFET N-CH 600V 58A SOT-227

floor Price/Ceiling Price

US $ 22.91~32.45 / Piece | Get Latest Price
Part Number:
APT60M75JLL
Mfg:
Supply Ability:
5000

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  • Unit Price
  • $32.45
  • $30.54
  • $27.2
  • $25.77
  • $24.82
  • $23.86
  • $23.39
  • $22.91
  • Processing time
  • 15 Days
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Upload time: 2024/7/15

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Product Details

Quick Details

Series: POWER MOS 7® Manufacturer: Microsemi Power Products Group
FET Type: MOSFET N-Channel, Metal Oxide FET Feature: Standard
Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25° C: 58A
Rds On (Max) @ Id, Vgs: 75 mOhm @ 29A, 10V Interface Type : Ethernet, I2C, SPI, UART, USB
Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) @ Vgs: 195nC @ 10V
Input Capacitance (Ciss) @ Vds: 8930pF @ 25V Power - Max: 595W
Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP?    

Description

FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Drain to Source Voltage (Vdss): 600V
Manufacturer: Microsemi Power Products Group
Supplier Device Package: ISOTOP?
Gate Charge (Qg) @ Vgs: 195nC @ 10V
Series: POWER MOS 7®
Current - Continuous Drain (Id) @ 25° C: 58A
Vgs(th) (Max) @ Id: 5V @ 5mA
Rds On (Max) @ Id, Vgs: 75 mOhm @ 29A, 10V
Input Capacitance (Ciss) @ Vds: 8930pF @ 25V
Power - Max: 595W


Features:

• Lower Input Capacitance
• Increased Power Dissipation
• Lower Miller Capacitance
• Easier To Drive
• Lower Gate Charge, Qg
• Popular SOT-227 Package



Specifications

Symbol Parameter
APT60M75JLL
UNIT
VDSS Drain-Source Voltage
600
Volts
ID Continuous Drain Current @ TC = 25
58
Amps
IDM Pulsed Drain Current
232
VGS Gate-Source Voltage
±30
Volts
VGSM Gate-Source Voltage Transient
±40
PD Total Power Dissipation @ TC = 25
595
Watts
Linear Derating Factor
4.76
W/
TJ,TSTG Operating and StorageTemperature Range
-55 to 150
TL Lead Temperature: 0.063" from Case for 10 Sec.
300
IAR Avalanche Current(Repetitive and Non-epetitive)
58
Amps
EAR Repetitive Avalanche Energy
50
mJ
EAS Single Pulse Avalanche Energy
3200

 




Description

Power MOS 7TM APT60M75JLL is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.




Parameters:

Technical/Catalog InformationAPT60M75JLL
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Mounting TypeChassis Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C58A
Rds On (Max) @ Id, Vgs75 mOhm @ 29A, 10V
Input Capacitance (Ciss) @ Vds 8930pF @ 25V
Power - Max595W
PackagingTube
Gate Charge (Qg) @ Vgs195nC @ 10V
Package / CaseSOT-227
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names APT60M75JLL
APT60M75JLL



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