APT60M75JFL

Features:

• Lower Input Capacitance
• Increased Power Dissipation
• Lower Miller Capacitance
• Easier To Drive
• Lower Gate Charge, Qg
• Popular SOT-227 Package


Specifications

All Ratings: TC = 25°C unless otherwise specified.

Symbol	Parameter	APT5010JFLL	UNIT
VDSS	Drain-Source Voltage	600	Volts
ID	Continuous Drain Current @ TC = 25°C	58	Amps
IDM	Pulsed Drain Current	232
VGS	Gate-Source Voltage Continuous	±30	Volts
VGSM	Gate-Source Voltage Transient	±40
PD	Total Power Dissipation @ TC = 25°C	595	Watts
	Linear Derating Factor	4.76	W/°C
TJ,TSTG	Operating and Storage Junction Temperature Range	-55 to 150	°C
TL	Lead Temperature: 0.063" from Case for 10 Sec.	300
IAR	Avalanche Current (Repetitve and Non-Repetitive)	58	Amps
EAR	Repetitive Avalanche Energy	50	mJ
EAS	Single Pulse Avalanche Energy	3200

Description

 Power MOS 7^TM APT60M75JFL is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7^TM by significantly lowering RDS(ON) and Qg. Power MOS 7^TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT'spatented metal gate structure.