APT60M60JLL

FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Drain to Source Voltage (Vdss): 600V
Manufacturer: Microsemi Power Products Group
Supplier Device Package: ISOTOP?
Current - Continuous Drain (Id) @ 25° C: 70A
Series: POWER MOS 7®
Vgs(th) (Max) @ Id: 5V @ 5mA
Power - Max: 694W
Rds On (Max) @ Id, Vgs: 60 mOhm @ 35A, 10V
Gate Charge (Qg) @ Vgs: 289nC @ 10V
Input Capacitance (Ciss) @ Vds: 12630pF @ 25V


Features:

• Lower Input Capacitance
• Increased Power Dissipation
• Lower Miller Capacitance
• Easier To Drive
• Lower Gate Charge, Qg
• Popular SOT-227 Package


Specifications

Symbol	Parameter	APT60M60JLL	UNIT
VDSS	Drain-Source Voltage	600	Volts
ID	Continuous Drain Current @ TC = 25	70	Amps
IDM	Pulsed Drain Current	280
VGS	Gate-Source Voltage	±30	Volts
VGSM	Gate-Source Voltage Transient	±40
PD	Total Power Dissipation @ TC = 25	690	Watts
	Linear Derating Factor	5.52	W/
TJ,TSTG	Operating and StorageTemperature Range	-55 to 150
TL	Lead Temperature: 0.063" from Case for 10 Sec.	300
IAR	Avalanche Current(Repetitive and Non-epetitive)	70	Amps
EAR	Repetitive Avalanche Energy	50	mJ
EAS	Single Pulse Avalanche Energy	3600

Symbol	Characteristic / Test Conditions	APT60D20LCT	UNIT
VR	Maximum D.C. Reverse Voltage	600	Volts
VRRM	Maximum Peak Repetitive Reverse Voltage
VRWM	Maximum Working Peak Reverse Voltage
IF(AV)	Maximum Average Forward Current(TC =70, Duty Cycle =0.5)	60	Amps
IF(RMS)	RMS Forward Current	100
IFSM	Non-Repetitive Forward Surge Current (TJ = 45, 8.3ms)	600
TJ,TSTG	Operating and StorageTemperature Range	-55 to 150
TL	Lead Temperature: 0.063" from Case for 10 Sec.	300

Description

Power MOS 7^TM APT60M60JLL is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7^TM by significantly lowering R_DS(ON) and Q_g. Power MOS 7^TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.

Parameters:

Technical/Catalog Information	APT60M60JLL
Vendor	Microsemi-PPG
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	70A
Rds On (Max) @ Id, Vgs	60 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds	12630pF @ 25V
Power - Max	694W
Packaging	Tube
Gate Charge (Qg) @ Vgs	289nC @ 10V
Package / Case	SOT-227
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	APT60M60JLL APT60M60JLL