Features: • Low Forward Voltage Drop • High Freq. Switching to 150KHz• Low Tail Current • Ultra Low Leakage Current• Ultrafast Soft Recovery Antiparallel Diode• RBSOA and SCSOA RatedSpecifications Symbol Parameter APT60GF60JRD UNIT VCES Collector-Emi...
APT60GT60JRD: Features: • Low Forward Voltage Drop • High Freq. Switching to 150KHz• Low Tail Current • Ultra Low Leakage Current• Ultrafast Soft Recovery Antiparallel Diode• R...
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Specifications Symbol Parameter APT6010 UNIT VDSS Drain-Source Voltage 600 Volts ...
Symbol | Parameter | APT60GF60JRD | UNIT |
VCES | Collector-Emitter Voltage | 600 | Volts |
VCGR | Collector-Gate Voltage (RGE = 20K) | 600 | |
VGE | Gate-Emitter Voltage | ±20 | |
IC1 | Continuous Collector Current @ TC = 25°C | 90 | Amps |
IC2 | Continuous Collector Current @ TC = 90°C | 60 | |
ICM1 | Pulsed Collector Current @ TC = 25°C | 180 | |
ICM2 | Pulsed Collector Current @ TC = 90°C | 120 | |
PD | Total Power Dissipation | 375 | Watts |
TJ,TSTG | Operating and Storage Junction Temperature Range | -55 to 150 | °C |
TL | Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. | 300 |
The Thunderbolt IGBT™ APT60GT60JRD is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and ultrafast switching speed.