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APT6030SVFR

Features: • Faster Switching • Avalanche Energy Rated• Lower Leakage • TO-247 or Surface Mount D3PAK PackageSpecifications Symbol Parameter APT4020B_SVFR(G) UNIT VDSS Drain-Source Voltage 600 Volts ID Continuous Drain Current @ TC = 25°C 21 Amps IDM ...

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SeekIC No. : 004287482 Detail

APT6030SVFR: Features: • Faster Switching • Avalanche Energy Rated• Lower Leakage • TO-247 or Surface Mount D3PAK PackageSpecifications Symbol Parameter APT4020B_SVFR(G) UNIT V...

APT6030SVFR Data Sheet

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Part Number:
APT6030SVFR
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/30

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Product Details

Description



Features:

• Faster Switching
• Avalanche Energy Rated
• Lower Leakage
• TO-247 or Surface Mount D3PAK Package


Specifications

Symbol Parameter APT4020B_SVFR(G) UNIT
VDSS Drain-Source Voltage 600 Volts
ID Continuous Drain Current @ TC = 25°C 21 Amps
IDM Pulsed Drain Current 1 84 Amps
VGS Gate-Source Voltage Continuous ±30 Volts
VGSM Gate-Source Voltage Transient ±40 Volts
PD Total Power Dissipation @ TC = 25°C 298 Watts
Linear Derating Factor 2.38 W/°C
TJ,TSTG Operating and Storage Junction Temperature Range -55 to 150 °C
TL Lead Temperature: 0.063" from Case for 10 Sec. 300 °C
LAR Avalanche Current 1 (Repetitive and Non-Repetitive) 21 Amps
EAR Repetitive Avalanche Energy 1 30 mJ
EAS Single Pulse Avalanche Energy 4 1300 mJ



Description

Power MOS V® APT6030SVFR is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layou




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