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APT6029BLL

Features: • Lower Input Capacitance • Increased Power Dissipation• Lower Miller Capacitance • Easier To Drive• Lower Gate Charge, Qg • TO-247 or Surface Mount D3PAK PackageSpecifications Symbol Parameter APT6029 UNIT VDSS Drain-Source Voltage 60...

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APT6029BLL: Features: • Lower Input Capacitance • Increased Power Dissipation• Lower Miller Capacitance • Easier To Drive• Lower Gate Charge, Qg • TO-247 or Surface Mount D3P...

APT6029BLL Data Sheet

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Part Number:
APT6029BLL
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• Lower Input Capacitance
• Increased Power Dissipation
• Lower Miller Capacitance
• Easier To Drive
• Lower Gate Charge, Qg
• TO-247 or Surface Mount D3PAK Package


Specifications

Symbol Parameter APT6029
UNIT
VDSS Drain-Source Voltage
600
Volts
ID Continuous Drain Current @ TC = 25
21
Amps
IDM Pulsed Drain Current
84
VGS Gate-Source Voltage Continuous
±30
Volts
VGSM Gate-Source Voltage Transient
±40
PD Total Power Dissipation @ TC = 25
300
Watts
Linear Derating Factor
2.4
W/
TJ,TSTG Operating and StorageTemperature Range
-55 to 150
TL Lead Temperature: 0.063" from Case for 10 Sec.
300
IAR Avalanche Current(Repetitive and Non-epetitive)
21
Amps
EAR Repetitive Avalanche Energy
30
mJ
EAS Single Pulse Avalanche Energy
1210



Description

Power MOS 7TM APT6029BLL is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.




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