APT6017JFLL

MOSFET N-CH 600V 31A SOT-227

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SeekIC No. : 004130994 Detail

APT6017JFLL: MOSFET N-CH 600V 31A SOT-227

floor Price/Ceiling Price

US $ 9.97~16.63 / Piece | Get Latest Price
Part Number:
APT6017JFLL
Mfg:
Supply Ability:
5000

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  • $9.97
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Upload time: 2024/11/21

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Product Details

Quick Details

Series: POWER MOS 7® Manufacturer: Microsemi Power Products Group
FET Type: MOSFET N-Channel, Metal Oxide FET Feature: Standard
Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25° C: 31A
Rds On (Max) @ Id, Vgs: 170 mOhm @ 15.5A, 10V Interface Type : Ethernet, I2C, SPI, UART, USB
Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) @ Vgs: 100nC @ 10V
Input Capacitance (Ciss) @ Vds: 4500pF @ 25V Power - Max: 375W
Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP?    

Description

FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Drain to Source Voltage (Vdss): 600V
Manufacturer: Microsemi Power Products Group
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP?
Series: POWER MOS 7®
Current - Continuous Drain (Id) @ 25° C: 31A
Rds On (Max) @ Id, Vgs: 170 mOhm @ 15.5A, 10V
Gate Charge (Qg) @ Vgs: 100nC @ 10V
Input Capacitance (Ciss) @ Vds: 4500pF @ 25V
Power - Max: 375W


Features:

• Lower Input Capacitance
• Increased Power Dissipation
• Lower Miller Capacitance
• Easier To Drive
• Lower Gate Charge, Qg
• Popular SOT-227 Package



Specifications

All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter APT5010JFLL UNIT
VDSS Drain-Source Voltage 600 Volts
ID Continuous Drain Current @ TC = 25°C 31 Amps
IDM Pulsed Drain Current
124
VGS Gate-Source Voltage Continuous ±30 Volts
VGSM Gate-Source Voltage Transient ±40
PD Total Power Dissipation @ TC = 25°C 375 Watts
Linear Derating Factor 3.0 W/°C
TJ,TSTG Operating and Storage Junction Temperature Range -55 to 150 °C
TL Lead Temperature: 0.063" from Case for 10 Sec. 300
IAR Avalanche Current
(Repetitve and Non-Repetitive)
31 Amps
EAR Repetitive Avalanche Energy 35 mJ
EAS Single Pulse Avalanche Energy 1600



Description

Power MOS 7TM APT6017JFLL is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.




Parameters:

Technical/Catalog InformationAPT6017JFLL
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Mounting TypeChassis Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C31A
Rds On (Max) @ Id, Vgs170 mOhm @ 15.5A, 10V
Input Capacitance (Ciss) @ Vds 4500pF @ 25V
Power - Max375W
PackagingTube
Gate Charge (Qg) @ Vgs100nC @ 10V
Package / CaseSOT-227
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names APT6017JFLL
APT6017JFLL



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