APT6013JVR

FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Drain to Source Voltage (Vdss): 600V
Manufacturer: Microsemi Power Products Group
Supplier Device Package: ISOTOP?
Current - Continuous Drain (Id) @ 25° C: 40A
Power - Max: 500W
Vgs(th) (Max) @ Id: 4V @ 1mA
Series: POWER MOS V®
Rds On (Max) @ Id, Vgs: 130 mOhm @ 500mA, 10V
Gate Charge (Qg) @ Vgs: 540nC @ 10V
Input Capacitance (Ciss) @ Vds: 10560pF @ 25V


Features:

• Faster Switching
• 100% Avalanche Tested
• Lower Leakage
• Popular SOT-227 Package


Specifications

Symbol	Parameter	APT6013JVR	UNIT
VDSS	Drain-Source Voltage	600	Volts
ID	Continuous Drain Current @ TC = 25	40	Amps
IDM	Pulsed Drain Current	160
VGS	Gate-Source Voltage Continuous	±30	Volts
VGSM	Gate-Source Voltage Transient	±40
PD	Total Power Dissipation @ TC = 25	500	Watts
	Linear Derating Factor	4	W/
TJ,TSTG	Operating and StorageTemperature Range	-55 to 150
TL	Lead Temperature: 0.063" from Case for 10 Sec.	300
IAR	Avalanche Current(Repetitive and Non-epetitive)	30	Amps
EAR	Repetitive Avalanche Energy	30	mJ
EAS	Single Pulse Avalanche Energy	1300

Description

Power MOS V^® APT6013JVR is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V^® also achieves faster switching speeds through optimized gate layout

Parameters:

Technical/Catalog Information	APT6013JVR
Vendor	Microsemi-PPG
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	40A
Rds On (Max) @ Id, Vgs	130 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	10560pF @ 25V
Power - Max	500W
Packaging	Tube
Gate Charge (Qg) @ Vgs	540nC @ 10V
Package / Case	SOT-227
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	APT6013JVR APT6013JVR