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APT6011B2VRG

MOSFET N-CH 600V 49A T-MAX

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SeekIC No. : 003431388 Detail

APT6011B2VRG: MOSFET N-CH 600V 49A T-MAX

APT6011B2VRG Data Sheet

floor Price/Ceiling Price

US $ 12.79~12.79 / Piece | Get Latest Price
Part Number:
APT6011B2VRG
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~30
  • Unit Price
  • $12.79
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/10/17

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Product Details

Quick Details

Series: POWER MOS V® Manufacturer: Microsemi Power Products Group
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 600V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 49A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 110 mOhm @ 24.5A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) @ Vgs: 450nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 8900pF @ 25V
Power - Max: 625W Mounting Type: Through Hole
Package / Case: TO-247-3 Variant Supplier Device Package: T-MAX? [B2]    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Packaging: Tube
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25° C: 49A
Manufacturer: Microsemi Power Products Group
Power - Max: 625W
Series: POWER MOS V®
Input Capacitance (Ciss) @ Vds: 8900pF @ 25V
Package / Case: TO-247-3 Variant
Supplier Device Package: T-MAX? [B2]
Gate Charge (Qg) @ Vgs: 450nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Rds On (Max) @ Id, Vgs: 110 mOhm @ 24.5A, 10V


Parameters:

Technical/Catalog InformationAPT6011B2VRG
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C49A
Rds On (Max) @ Id, Vgs110 mOhm @ 24.5A, 10V
Input Capacitance (Ciss) @ Vds 8900pF @ 25V
Power - Max625W
PackagingTube
Gate Charge (Qg) @ Vgs450nC @ 10V
Package / CaseT-MAX
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names APT6011B2VRG
APT6011B2VRG



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