MOSFET N-CH 600V 47A SOT-227
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Specifications Symbol Parameter APT6010 UNIT VDSS Drain-Source Voltage 600 Volts ...
Series: | POWER MOS 7® | Manufacturer: | Microsemi Power Products Group |
FET Type: | MOSFET N-Channel, Metal Oxide | FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 600V | Current - Continuous Drain (Id) @ 25° C: | 47A |
Rds On (Max) @ Id, Vgs: | 100 mOhm @ 23.5A, 10V | Interface Type : | Ethernet, I2C, SPI, UART, USB |
Vgs(th) (Max) @ Id: | 5V @ 2.5mA | Gate Charge (Qg) @ Vgs: | 150nC @ 10V |
Input Capacitance (Ciss) @ Vds: | 6710pF @ 25V | Power - Max: | 520W |
Mounting Type: | Chassis Mount | Package / Case: | SOT-227-4, miniBLOC |
Supplier Device Package: | ISOTOP? |
Symbol | Parameter | APT6010JLL | UNIT |
VDSS | Drain-Source Voltage | 600 | Volts |
ID | Continuous Drain Current @ TC = 25°C | 47 | Amps |
IDM | Pulsed Drain Current | 188 | |
VGS | Gate-Source Voltage Continuous | ±30 | Volts |
VGSM | Gate-Source Voltage Transient | ±40 | |
PD | Total Power Dissipation @ TC = 25°C | 520 | Watts |
Linear Derating Factor | 4.16 | W/°C | |
TJ,TSTG | Operating and Storage Junction Temperature Range | -55 to 150 | °C |
TL | Lead Temperature: 0.063" from Case for 10 Sec. | 300 | |
IAR | Avalanche Current (Repetitive and Non-Repetitive) | 47 | Amps |
EAR | Repetitive Avalanche Energy | 50 | mJ |
EAS | Single Pulse Avalanche Energy | 3000 |
Technical/Catalog Information | APT6010JLL |
Vendor | Microsemi-PPG |
Category | Discrete Semiconductor Products |
Mounting Type | Chassis Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25° C | 47A |
Rds On (Max) @ Id, Vgs | 100 mOhm @ 23.5A, 10V |
Input Capacitance (Ciss) @ Vds | 6710pF @ 25V |
Power - Max | 520W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 150nC @ 10V |
Package / Case | SOT-227 |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | APT6010JLL APT6010JLL |