Features: Faster Switching 100% Avalanche Tested Lower Leakage Popular TO-247 PackageSpecifications Symbol Parameter APT5016 UNIT VDSS Drain-Source Voltage 400 Volts I D Continuous Drain Current 27 Amps IDM Pulsed Drain Current ...
APT4016BVR: Features: Faster Switching 100% Avalanche Tested Lower Leakage Popular TO-247 PackageSpecifications Symbol Parameter APT5016 UNIT VDSS Drain-Source Voltage 400 ...
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Faster Switching
100% Avalanche Tested
Lower Leakage
Popular TO-247 Package
Symbol |
Parameter |
APT5016
|
UNIT |
VDSS |
Drain-Source Voltage |
400 |
Volts |
I D |
Continuous Drain Current |
27 |
Amps |
IDM |
Pulsed Drain Current |
108 | |
VGS |
Gate-Source Voltage Continuous |
±30 |
Volts |
VGSM |
Gate-Source Voltage Transient |
±40 | |
PD |
Total Power Dissipation @ TC = 25°C |
280 |
Watts |
Linear Derating Factor |
2.24 |
W/ | |
TJ ,TSTG |
Operating and Storage Junction Temperature Range |
-55 to 150 |
|
TL |
Lead Temperature: 0.063" from Case for 10 Sec. |
300 | |
IAR |
Avalanche Current (Repetitive and Non-Repetitive) |
27 |
Amps |
EAR |
Repetitive Avalanche Energy |
30 |
mJ |
EAS |
Single Pulse Avalanche Energy |
1210 |
Power MOS V(R) APT4016BVR is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS V(R)also achieves faster switching speeds through optimized gate layout.