APT4016BVR

Features: Faster Switching 100% Avalanche Tested Lower Leakage Popular TO-247 PackageSpecifications Symbol Parameter APT5016 UNIT VDSS Drain-Source Voltage 400 Volts I D Continuous Drain Current 27 Amps IDM Pulsed Drain Current ...

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SeekIC No. : 004287324 Detail

APT4016BVR: Features: Faster Switching 100% Avalanche Tested Lower Leakage Popular TO-247 PackageSpecifications Symbol Parameter APT5016 UNIT VDSS Drain-Source Voltage 400 ...

floor Price/Ceiling Price

Part Number:
APT4016BVR
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

Faster Switching

100% Avalanche Tested
Lower Leakage

Popular TO-247 Package




Specifications

Symbol
Parameter
APT5016
 
UNIT
VDSS
Drain-Source Voltage
400
Volts
I D

Continuous Drain Current
27
Amps

IDM

Pulsed Drain Current
108
VGS
Gate-Source Voltage Continuous
±30
Volts
VGSM
Gate-Source Voltage Transient
±40
PD
Total Power Dissipation @ TC = 25°C
280
Watts
Linear Derating Factor
2.24
W/
TJ ,TSTG
Operating and Storage Junction Temperature Range
-55 to 150
TL
Lead Temperature: 0.063" from Case for 10 Sec.
300
IAR
Avalanche Current (Repetitive and Non-Repetitive)
27
Amps
EAR
Repetitive Avalanche Energy
30
mJ
EAS
Single Pulse Avalanche Energy
1210
 



Description

 


Power MOS V(R) APT4016BVR is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS V(R)also achieves faster switching speeds through optimized gate layout.




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