APT4016BVR Selling Leads, Price trend, APT4016BVR DataSheet download, circuit diagram from SeekIC.com

Features: Faster Switching 100% Avalanche Tested Lower Leakage Popular TO-247 PackageSpecifications Symbol Parameter APT5016 UNIT VDSS Drain-Source Voltage 400 Volts I D Continuous Drain Current 27 Amps IDM Pulsed Drain Current ...

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APT4016BVR: Features: Faster Switching 100% Avalanche Tested Lower Leakage Popular TO-247 PackageSpecifications Symbol Parameter APT5016 UNIT VDSS Drain-Source Voltage 400 ...

APT4016BVR Data Sheet

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Part Number:: APT4016BVR
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/7/15

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Recent History
What is this?

APT4012BVFRG evaluate
US $7.19 - 7.19 / Piece

MOSFET N-CH 400V 37A TO-247
APT4012BVR evaluate
Features: • Faster Switching • 100% Avalanche Tested• Lower Leakage • Popu...
APT4012SVFRG evaluate
US $7.68 - 7.68 / Piece

MOSFET N-CH 400V 37A D3PAK

Product Details

Description

Features:

Faster Switching

100% Avalanche Tested
Lower Leakage

Popular TO-247 Package

Specifications

Symbol	Parameter	APT5016	UNIT
V_DSS	Drain-Source Voltage	400	Volts
I_D	Continuous Drain Current	27	Amps
I_DM	Pulsed Drain Current	108	Amps
V_GS	Gate-Source Voltage Continuous	±30	Volts
V_GSM	Gate-Source Voltage Transient	±40	Volts
P_D	Total Power Dissipation @ T_C = 25°C	280	Watts
P_D	Linear Derating Factor	2.24	W/
T_J,T_STG	Operating and Storage Junction Temperature Range	-55 to 150
T_L	Lead Temperature: 0.063" from Case for 10 Sec.	300
I_AR	Avalanche Current (Repetitive and Non-Repetitive)	27	Amps
E_AR	Repetitive Avalanche Energy	30	mJ
E_AS	Single Pulse Avalanche Energy	1210	mJ

Description

Power MOS V(R) APT4016BVR is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS V(R)also achieves faster switching speeds through optimized gate layout.

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APT4016BVR

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