APT39M60J

FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Drain to Source Voltage (Vdss): 600V
Manufacturer: Microsemi Power Products Group
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power - Max: 480W
Supplier Device Package: ISOTOP?
Series: POWER MOS 8™
Current - Continuous Drain (Id) @ 25° C: 42A
Rds On (Max) @ Id, Vgs: 110 mOhm @ 28A, 10V
Gate Charge (Qg) @ Vgs: 280nC @ 10V
Input Capacitance (Ciss) @ Vds: 11300pF @ 25V


Features:

• Fast switching with low EMI/RFI
• Low RDS(on)
• Ultra low Crss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant


Application

• PFC and other boost converter
• Buck converter
• Two switch forward (asymmetrical bridge)
• Single switch forward
• Flyback
• Inverters


Specifications

Symbol	Parameter	Ratings	Unit
ID	Continuous Drain Current @ TC = 25°C	39	A
	Continuous Drain Current @ TC = 100°C	24
IDM	Pulsed Drain Current 1	210
VGS	Gate-Source Voltage	±30	V
EAS	Single Pulse Avalanche Energy 2	1580	mJ
IAR	Avalanche Current, Repetitive or Non-Repetitive	28	A

Description

Power MOS 8™ APT39M60J is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability.