Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 145nC @ 10V
Package / Case: TO-247-3
Power - Max: 520W
Vgs(th) (Max) @ Id: 5V @ 1mA
Current - Continuous Drain (Id) @ 25° C: 37A
Manufacturer: Microsemi Power Products Group
Supplier Device Package: TO-247 [B]
Rds On (Max) @ Id, Vgs: 150 mOhm @ 18A, 10V
Input Capacitance (Ciss) @ Vds: 5710pF @ 25V
Features: • Fast switching with low EMI
• Low trr for high reliability
• Ultra low Crss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
Application• ZVS phase shifted and other full bridge
• Half bridge
• PFC and other boost converter
• Buck converter
• Single and two switch forward
• FlybackSpecifications
| Symbol |
Parameter |
Ratings |
Units |
ID
IDM
VGS
EAS
IAR |
Continuous Drain Current @ TC = 25°C
Continuous Drain Current @ TC = 100°C
Pulsed Drain Current 1
Gate-Source Voltage
Single Pulse Avalanche Energy 2
Avalanche Current, Repetitive or Non-Repetitive |
37
24
115
±30
780
18 |
A
V
mJ
A
|
DescriptionPower MOS 8™ APT37F50B is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.
APT37F50B Data Sheet
