Features: • Lower Input Capacitance • Increased Power Dissipation• Lower Miller Capacitance • Easier To Drive• Lower Gate Charge, Qg • TO-247 or Surface Mount D3PAK PackageSpecifications Symbol Parameter APT30M75 UNIT VDSS Drain-Source Voltage 3...
APT30M75BLL: Features: • Lower Input Capacitance • Increased Power Dissipation• Lower Miller Capacitance • Easier To Drive• Lower Gate Charge, Qg • TO-247 or Surface Mount D3P...
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Features: • Ultrafast Recovery Times• Soft Recovery Characteristics• Popular TO-...
Features: Ultrafast Recovery TimesSoft Recovery CharacteristicsPopular TO-247 PackageLow Forward V...
Symbol | Parameter | APT30M75 |
UNIT |
VDSS | Drain-Source Voltage |
300 |
Volts |
ID | Continuous Drain Current @ TC = 25 |
44 |
Amps |
IDM | Pulsed Drain Current |
176 | |
VGS | Gate-Source Voltage Continuous |
±30 |
Volts |
VGSM | Gate-Source Voltage Transient |
±40 | |
PD | Total Power Dissipation @ TC = 25 |
325 |
Watts |
Linear Derating Factor |
2.60 |
W/ | |
TJ,TSTG | Operating and StorageTemperature Range |
-55 to 150 |
|
TL | Lead Temperature: 0.063" from Case for 10 Sec. |
300 | |
IAR | Avalanche Current(Repetitive and Non-Repetitive) |
44 |
Amps |
EAR | Repetitive Avalanche Energy |
30 |
mJ |
EAS | Single Pulse Avalanche Energy |
1300 |
Power MOS 7TM APT30M75BLL is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.