APT30M70BVR Selling Leads, Price trend, APT30M70BVR DataSheet download, circuit diagram from SeekIC.com

Features: • Faster Switching • 100% Avalanche Tested• Lower Leakage • Popular TO-247 PackageSpecifications Symbol Parameter APT30M70BVR UNIT VDSS Drain-Source Voltage 300 Volts ID Continuous Drain Current @ TC = 25 48 Amps IDM Pulsed Drai...

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SeekIC No. : 004287310 Detail

APT30M70BVR: Features: • Faster Switching • 100% Avalanche Tested• Lower Leakage • Popular TO-247 PackageSpecifications Symbol Parameter APT30M70BVR UNIT VDSS Drain-Source...

APT30M70BVR Data Sheet

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Part Number:: APT30M70BVR
Supply Ability:: 5000

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1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/7/15

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Product Details

Description

Features:

• Faster Switching
• 100% Avalanche Tested
• Lower Leakage
• Popular TO-247 Package

Specifications

Symbol	Parameter	APT30M70BVR	UNIT
V_DSS	Drain-Source Voltage	300	Volts
I_D	Continuous Drain Current @ T_C = 25	48	Amps
I_DM	Pulsed Drain Current	192	Amps
V_GS	Gate-Source Voltage Continuous	±30	Volts
V_GSM	Gate-Source Voltage Transient	±40	Volts
P_D	Total Power Dissipation @ T_C = 25	370	Watts
P_D	Linear Derating Factor	2.96	W/
T_J,T_STG	Operating and StorageTemperature Range	-55 to 150
T_L	Lead Temperature: 0.063" from Case for 10 Sec.	300
I_AR	Avalanche Current(Repetitive and Non-Repetitive)	48	Amps
E_AR	Repetitive Avalanche Energy	30	mJ
E_AS	Single Pulse Avalanche Energy	1300	mJ

Description

Power MOS V^{® APT30M70BVR} is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V^® also achieves faster switching speeds through optimized gate layout.

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APT30M70BVR

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