APT30M61BLL Selling Leads, Price trend, APT30M61BLL DataSheet download, circuit diagram from SeekIC.com

Features: • Lower Input Capacitance • Increased Power Dissipation• Lower Miller Capacitance • Easier To Drive• Lower Gate Charge, Qg • TO-247 or Surface Mount D3PAK PackageSpecifications Symbol Parameter APT30M61 UNIT VDSS Drain-Source Voltage ...

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SeekIC No. : 004287304 Detail

APT30M61BLL: Features: • Lower Input Capacitance • Increased Power Dissipation• Lower Miller Capacitance • Easier To Drive• Lower Gate Charge, Qg • TO-247 or Surface Mount D3P...

APT30M61BLL Data Sheet

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Part Number:: APT30M61BLL
Supply Ability:: 5000

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1~5000

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Negotiable

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Upload time: 2024/12/21

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Product Details

Description

Features:

• Lower Input Capacitance
• Increased Power Dissipation
• Lower Miller Capacitance
• Easier To Drive
• Lower Gate Charge, Qg
• TO-247 or Surface Mount D³PAK Package

Specifications

Symbol	Parameter	APT30M61	UNIT
V_DSS	Drain-Source Voltage	300	Volts
I_D	Continuous Drain Current @ T_C = 25	54	Amps
I_DM	Pulsed Drain Current	216	Amps
V_GS	Gate-Source Voltage Continuous	±30	Volts
V_GSM	Gate-Source Voltage Transient	±40	Volts
P_D	Total Power Dissipation @ T_C = 25	400	Watts
P_D	Linear Derating Factor	3.20	W/
T_J,T_STG	Operating and StorageTemperature Range	-55 to 150
T_L	Lead Temperature: 0.063" from Case for 10 Sec.	300
I_AR	Avalanche Current(Repetitive and Non-Repetitive)	54	Amps
E_AR	Repetitive Avalanche Energy	30	mJ
E_AS	Single Pulse Avalanche Energy	1300	mJ

Description

Power MOS 7^{TM APT30M61BLL} is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7^TM by significantly lowering R_DS(ON) and Q_g. Power MOS 7^TMcombines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.

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