APT30M36JLL

MOSFET N-CH 300V 76A SOT-227

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SeekIC No. : 004130892 Detail

APT30M36JLL: MOSFET N-CH 300V 76A SOT-227

floor Price/Ceiling Price

US $ 18.75~18.75 / Piece | Get Latest Price
Part Number:
APT30M36JLL
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~10
  • Unit Price
  • $18.75
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/7/15

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Product Details

Quick Details

Series: POWER MOS 7® Manufacturer: Microsemi Power Products Group
FET Type: MOSFET N-Channel, Metal Oxide FET Feature: Standard
Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25° C: 76A
Rds On (Max) @ Id, Vgs: 36 mOhm @ 38A, 10V Interface Type : Ethernet, I2C, SPI, UART, USB
Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) @ Vgs: 115nC @ 10V
Input Capacitance (Ciss) @ Vds: 6480pF @ 25V Power - Max: 463W
Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP?    

Description

FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Manufacturer: Microsemi Power Products Group
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP?
Drain to Source Voltage (Vdss): 300V
Series: POWER MOS 7®
Power - Max: 463W
Current - Continuous Drain (Id) @ 25° C: 76A
Rds On (Max) @ Id, Vgs: 36 mOhm @ 38A, 10V
Gate Charge (Qg) @ Vgs: 115nC @ 10V
Input Capacitance (Ciss) @ Vds: 6480pF @ 25V


Features:

•Lower Input Capacitance
•Increased Power Dissipation
•Lower Miller Capacitance
•Easier To Drive
•Lower Gate Charge, Qg
•Popular SOT-227 Package



Specifications

Symbol

Parameter

APT30M36JLL

UNIT

VDSS

Drain-Source Voltage

300

Volts

ID

Continuous Drain Current @ TC= 25°C

76

Amps

IDM

Pulsed Drain Current

304

VGS

Gate-Source Voltage Continuous

±30

Volts

VGSM

Gate-Source Voltage Transient

±40

PD

Total Power Dissipation @ Tc= 25°C

463

Watts

Linear Derating Factor

3.70

W/°C

TJ,TSTG

Operating and Storage Junction Temperature Range

-55 to 150

°C

TL

Lead Temperature: 0.063" from Case for 10 Sec.

300

IAR

Avalanche Current (Repetitive and Non-Repetitive)

76

Amps

EAR

Repetitive Avalanche Energy

50

mJ

EAS

Single Pulse Avalanche Energy

2500




Description

Power MOS 7 TM APT30M36JLL is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.  Both conduction and switching losses are addressed with Power MOS 7 TM  by significantly lowering RDS(ON) and Qg.  Power MOS 7 TM  combines lower conduction and switching  losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.




Parameters:

Technical/Catalog InformationAPT30M36JLL
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Mounting TypeChassis Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25° C76A
Rds On (Max) @ Id, Vgs36 mOhm @ 38A, 10V
Input Capacitance (Ciss) @ Vds 6480pF @ 25V
Power - Max463W
PackagingTube
Gate Charge (Qg) @ Vgs115nC @ 10V
Package / CaseSOT-227
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names APT30M36JLL
APT30M36JLL



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