APT30M19JVFR

MOSFET N-CH 300V 130A SOT-227

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SeekIC No. : 004130762 Detail

APT30M19JVFR: MOSFET N-CH 300V 130A SOT-227

floor Price/Ceiling Price

US $ 34.53~34.53 / Piece | Get Latest Price
Part Number:
APT30M19JVFR
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~10
  • Unit Price
  • $34.53
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/14

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Product Details

Quick Details

Series: POWER MOS V® Manufacturer: Microsemi Power Products Group
FET Type: MOSFET N-Channel, Metal Oxide FET Feature: Standard
Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25° C: 130A
Rds On (Max) @ Id, Vgs: 19 mOhm @ 500mA, 10V Interface Type : Ethernet, I2C, SPI, UART, USB
Vgs(th) (Max) @ Id: 4V @ 5mA Gate Charge (Qg) @ Vgs: 975nC @ 10V
Input Capacitance (Ciss) @ Vds: 21600pF @ 25V Power - Max: 700W
Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP?    

Description

FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Power - Max: 700W
Manufacturer: Microsemi Power Products Group
Supplier Device Package: ISOTOP?
Drain to Source Voltage (Vdss): 300V
Current - Continuous Drain (Id) @ 25° C: 130A
Series: POWER MOS V®
Vgs(th) (Max) @ Id: 4V @ 5mA
Input Capacitance (Ciss) @ Vds: 21600pF @ 25V
Rds On (Max) @ Id, Vgs: 19 mOhm @ 500mA, 10V
Gate Charge (Qg) @ Vgs: 975nC @ 10V


Features:

• Fast Recovery Body Diode
• 100% Avalanche Tested
• Lower Leakage
• Popular SOT-227 Package
• Faster Switching



Specifications

Symbol Parameter
APT30M19JVFR
UNIT
VDSS Drain-Source Voltage
300
Volts
ID Continuous Drain Current @ TC = 25
130
Amps
IDM Pulsed Drain Current
520
VGS Gate-Source Voltage Continuous
±30
Volts
VGSM Gate-Source Voltage Transient
±40
PD Total Power Dissipation @ TC = 25
700
Watts
Linear Derating Factor
5.6
W/
TJ,TSTG Operating and StorageTemperature Range
-55 to 150
TL Lead Temperature: 0.063" from Case for 10 Sec.
300
IAR Avalanche Current(Repetitive and Non-Repetitive)
130
Amps
EAR Repetitive Avalanche Energy
50
mJ
EAS Single Pulse Avalanche Energy
3600







Description

Power MOS V® APT30M19JVFR is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.




Parameters:

Technical/Catalog InformationAPT30M19JVFR
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Mounting TypeChassis Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25° C130A
Rds On (Max) @ Id, Vgs19 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 21600pF @ 25V
Power - Max700W
PackagingTube
Gate Charge (Qg) @ Vgs975nC @ 10V
Package / CaseSOT-227
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names APT30M19JVFR
APT30M19JVFR



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