APT30M17JLL

MOSFET N-CH 300V 135A SOT-227

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SeekIC No. : 004130761 Detail

APT30M17JLL: MOSFET N-CH 300V 135A SOT-227

floor Price/Ceiling Price

US $ 33.91~33.91 / Piece | Get Latest Price
Part Number:
APT30M17JLL
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~10
  • Unit Price
  • $33.91
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/7/15

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Product Details

Quick Details

Series: POWER MOS 7® Manufacturer: Microsemi Power Products Group
FET Type: MOSFET N-Channel, Metal Oxide FET Feature: Standard
Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25° C: 135A
Rds On (Max) @ Id, Vgs: 17 mOhm @ 67.5A, 10V Interface Type : Ethernet, I2C, SPI, UART, USB
Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) @ Vgs: 230nC @ 10V
Input Capacitance (Ciss) @ Vds: 14100pF @ 25V Power - Max: 694W
Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP?    

Description

FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Manufacturer: Microsemi Power Products Group
Supplier Device Package: ISOTOP?
Gate Charge (Qg) @ Vgs: 230nC @ 10V
Drain to Source Voltage (Vdss): 300V
Series: POWER MOS 7®
Vgs(th) (Max) @ Id: 5V @ 5mA
Power - Max: 694W
Current - Continuous Drain (Id) @ 25° C: 135A
Rds On (Max) @ Id, Vgs: 17 mOhm @ 67.5A, 10V
Input Capacitance (Ciss) @ Vds: 14100pF @ 25V


Features:

Lower Gate Charge

Lower Input Capacitance


Lower Gate Charge, Qg

Easier To Drive


100% Avalanche Tested

Popular SOT-227 Package




Specifications

Symbol Parameter APT30M17JLL UNIT
VDSS Drain-Source Voltage 300 Volts
ID
Continuous Drain Current @ Tc = 25 °C
135 Amps
IDM
Pulsed Drain Current
540
VGS Gate-Source Voltage Continuous ±30 Volts
VGSM Gate-Source Voltage Transient ±40
PD Total Power Dissipation @ TC = 25 690 Watts
Linear Derati 5.52 W/°C
TJ,TSTG Operating and Storage Junction Temperature Range -55to 150 °C
TL Lead Temperature: 0.063" from Case for 10 Sec. 300
IAR
Avalanche Current (Repetitive and Non-Repetitive)
135 Amps
EAR Repetitive Avalanche Energy 50 mJ
EAS Single Pulse Avalanche Energy 3600



Parameters:

Technical/Catalog InformationAPT30M17JLL
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Mounting TypeChassis Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25° C135A
Rds On (Max) @ Id, Vgs17 mOhm @ 67.5A, 10V
Input Capacitance (Ciss) @ Vds 14100pF @ 25V
Power - Max694W
PackagingTube
Gate Charge (Qg) @ Vgs230nC @ 10V
Package / CaseSOT-227
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names APT30M17JLL
APT30M17JLL



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