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APT30GN60BDQ2

Features: • 600V Field Stop• Trench Gate: Low VCE(on)• Easy Paralleling• 10s Short Circuit Capability• 175°C RatedApplicationWelding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPSSpecifications Symbol Parameter Value Unit VCES Collector-Emitt...

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SeekIC No. : 004287279 Detail

APT30GN60BDQ2: Features: • 600V Field Stop• Trench Gate: Low VCE(on)• Easy Paralleling• 10s Short Circuit Capability• 175°C RatedApplicationWelding, Inductive Heating, Solar Inverters...

APT30GN60BDQ2 Data Sheet

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Part Number:
APT30GN60BDQ2
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• 600V Field Stop
• Trench Gate: Low VCE(on)
• Easy Paralleling
• 10s Short Circuit Capability
• 175°C Rated


Application

Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS


Specifications

Symbol Parameter Value Unit
VCES Collector-Emitter Voltage 600 Volts
VGE Gate-Emitter Voltage ± 30 Volts
IC Continuous Collector Current @ TC = 25°C 60 Amps
IC Continuous Collector Current @ TC = 110°C 37 Amps
ICM Pulsed Collector Current 1 75 Amps
SSOA Switching Safe Operating Area @ TJ = 150°C 75A @ 600V  
PD Total Power Dissipation 203 Watts
TL Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. 300 °C
Tj
Tstg		 Operating and Storage Junction Temperature Range -55 to 175 °C



Description

Utilizing the latest Field Stop and Trench Gate technologies, these IGBT APT30GN60BDQ2's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive design and minimizes losses.




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