APT29F100B2

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 30A
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 260nC @ 10V
Drain to Source Voltage (Vdss): 1000V (1kV)
Manufacturer: Microsemi Power Products Group
Series: POWER MOS 8™
Power - Max: 1040W
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Package / Case: TO-247-3 Variant
Supplier Device Package: T-MAX? [B2]
Input Capacitance (Ciss) @ Vds: 8500pF @ 25V
Rds On (Max) @ Id, Vgs: 440 mOhm @ 16A, 10V


Parameters:

Technical/Catalog Information	APT29F100B2
Vendor	Microsemi-PPG
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25° C	29A
Rds On (Max) @ Id, Vgs	460 mOhm @ 16A, 10V
Input Capacitance (Ciss) @ Vds	8500pF @ 25V
Power - Max	1040W
Packaging	Tube
Gate Charge (Qg) @ Vgs	260nC @ 10V
Package / Case	T-MAX
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	APT29F100B2 APT29F100B2