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APT28M120B2

MOSFET N-CH 1200V 29A T-MAX

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SeekIC No. : 003430809 Detail

APT28M120B2: MOSFET N-CH 1200V 29A T-MAX

APT28M120B2 Data Sheet

floor Price/Ceiling Price

US $ 8.77~14.61 / Piece | Get Latest Price
Part Number:
APT28M120B2
Mfg:
Supply Ability:
5000

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  • Unit Price
  • $14.61
  • $13.51
  • $11.51
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  • $10.04
  • $9.5
  • $9.2
  • $8.95
  • $8.77
  • Processing time
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Product Details

Quick Details

Series: POWER MOS 8™ Manufacturer: Microsemi Power Products Group
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV)
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 29A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 560 mOhm @ 14A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) @ Vgs: 300nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 9670pF @ 25V
Power - Max: 1135W Mounting Type: Through Hole
Package / Case: TO-247-3 Variant Supplier Device Package: T-MAX? [B2]    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 29A
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 300nC @ 10V
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Manufacturer: Microsemi Power Products Group
Series: POWER MOS 8™
Rds On (Max) @ Id, Vgs: 560 mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Input Capacitance (Ciss) @ Vds: 9670pF @ 25V
Power - Max: 1135W
Package / Case: TO-247-3 Variant
Supplier Device Package: T-MAX? [B2]


Parameters:

Technical/Catalog InformationAPT28M120B2
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25° C28A
Rds On (Max) @ Id, Vgs560 mOhm @ 14A, 10V
Input Capacitance (Ciss) @ Vds 9670pF @ 25V
Power - Max1135W
PackagingTube
Gate Charge (Qg) @ Vgs300nC @ 10V
Package / CaseT-MAX
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names APT28M120B2
APT28M120B2
APT28M120B2MI ND
APT28M120B2MIND
APT28M120B2MI



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