APT26F120B2

MOSFET N-CH 1200V 27A T-MAX

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SeekIC No. : 003430804 Detail

APT26F120B2: MOSFET N-CH 1200V 27A T-MAX

floor Price/Ceiling Price

US $ 10.29~17.14 / Piece | Get Latest Price
Part Number:
APT26F120B2
Mfg:
Supply Ability:
5000

Price Break

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  • 10~100
  • 100~250
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  • Unit Price
  • $17.14
  • $15.86
  • $13.5
  • $12.43
  • $11.79
  • $11.14
  • $10.8
  • $10.5
  • $10.29
  • Processing time
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Upload time: 2024/12/21

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Product Details

Quick Details

Series: - Manufacturer: Microsemi Power Products Group
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV)
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 27A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 650 mOhm @ 14A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) @ Vgs: 300nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 9670pF @ 25V
Power - Max: 1135W Mounting Type: Through Hole
Package / Case: TO-247-3 Variant Supplier Device Package: T-MAX?    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Packaging: Tube
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25° C: 27A
Gate Charge (Qg) @ Vgs: 300nC @ 10V
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Manufacturer: Microsemi Power Products Group
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Input Capacitance (Ciss) @ Vds: 9670pF @ 25V
Power - Max: 1135W
Package / Case: TO-247-3 Variant
Rds On (Max) @ Id, Vgs: 650 mOhm @ 14A, 10V
Supplier Device Package: T-MAX?


Parameters:

Technical/Catalog InformationAPT26F120B2
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25° C26A
Rds On (Max) @ Id, Vgs650 mOhm @ 14A, 10V
Input Capacitance (Ciss) @ Vds 9670pF @ 25V
Power - Max1135W
PackagingTube
Gate Charge (Qg) @ Vgs300nC @ 10V
Package / CaseT-MAX
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names APT26F120B2
APT26F120B2
APT26F120B2MI ND
APT26F120B2MIND
APT26F120B2MI



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