APT20M22JVFR

FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Drain to Source Voltage (Vdss): 200V
Manufacturer: Microsemi Power Products Group
Supplier Device Package: ISOTOP?
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Series: POWER MOS V®
Power - Max: 450W
Rds On (Max) @ Id, Vgs: 22 mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25° C: 97A
Gate Charge (Qg) @ Vgs: 435nC @ 10V
Input Capacitance (Ciss) @ Vds: 10200pF @ 25V


Features:

 Fast Recovery Body Diode

100% Avalanche Tested

Lower Leakage

Popular SOT-227 Package

Faster Switching

Specifications

Symbol	Parameter	APT20M22JVFR	UNIT
VDSS	Drain-Source Voltage	200	Volts
ID	Continuous Drain Current @ Tc = 25 °C	97	Amps
IDM	Pulsed Drain Current	388
VGS	Gate-Source Voltage Continuous	±30	Volts
VGSM	Gate-Source Voltage Transient	±40
PD	Total Power Dissipation @ TC = 25	450	Watts
	Linear Derati	3.6	W/°C
TJ,TSTG	Operating and Storage Junction Temperature Range	-55to 150	°C
TL	Lead Temperature: 0.063" from Case for 10 Sec.	300
IAR	Avalanche Current (Repetitive and Non-Repetitive)	97	Amps
EAR	Repetitive Avalanche Energy	50	mJ
EAS	Single Pulse Avalanche Energy	2500

Parameters:

Technical/Catalog Information	APT20M22JVFR
Vendor	Microsemi-PPG
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	97A
Rds On (Max) @ Id, Vgs	22 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	10200pF @ 25V
Power - Max	450W
Packaging	Tube
Gate Charge (Qg) @ Vgs	435nC @ 10V
Package / Case	SOT-227
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	APT20M22JVFR APT20M22JVFR