APT20M20JLL

FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Drain to Source Voltage (Vdss): 200V
Manufacturer: Microsemi Power Products Group
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP?
Series: POWER MOS 7®
Power - Max: 463W
Current - Continuous Drain (Id) @ 25° C: 104A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 52A, 10V
Gate Charge (Qg) @ Vgs: 110nC @ 10V
Input Capacitance (Ciss) @ Vds: 6850pF @ 25V


Features:

• Lower Input Capacitance

• Increased Power Dissipation

• Lower Miller Capacitance

 • Easier To Drive

• Lower Gate Charge, Qg

• Popular SOT-227 MAX Package

Specifications

Symbol	Parameter	APT20M20JLL	UNIT
VDSS	Drain-Source Voltage	200	Volts
ID	Continuous Drain Current @ Tc = 25 °C	106	Amps
IDM	Pulsed Drain Current	424
VGS	Gate-Source Voltage Continuous	±30	Volts
VGSM	Gate-Source Voltage Transient	±40
PD	Total Power Dissipation @ TC = 25	480	Watts
	Linear Derati	3.84	W/°C
TJ,TSTG	Operating and Storage Junction Temperature Range	-55to 150	°C
TL	Lead Temperature: 0.063" from Case for 10 Sec.	300
IAR	Avalanche Current (Repetitive and Non-Repetitive)	106	Amps
EAR	Repetitive Avalanche Energy	50	mJ
EAS	Single Pulse Avalanche Energy	2500

Parameters:

Technical/Catalog Information	APT20M20JLL
Vendor	Microsemi-PPG
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	104A
Rds On (Max) @ Id, Vgs	20 mOhm @ 52A, 10V
Input Capacitance (Ciss) @ Vds	6850pF @ 25V
Power - Max	463W
Packaging	Tube
Gate Charge (Qg) @ Vgs	110nC @ 10V
Package / Case	SOT-227
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	APT20M20JLL APT20M20JLL