APT20M19JVR

FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Drain to Source Voltage (Vdss): 200V
Manufacturer: Microsemi Power Products Group
Supplier Device Package: ISOTOP?
Power - Max: 500W
Current - Continuous Drain (Id) @ 25° C: 112A
Vgs(th) (Max) @ Id: 4V @ 1mA
Series: POWER MOS V®
Gate Charge (Qg) @ Vgs: 495nC @ 10V
Rds On (Max) @ Id, Vgs: 19 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds: 11640pF @ 25V


Features:

Faster Switching

100% Avalanche Tested

Lower Leakage

Popular SOT-227 Package

Specifications

Symbol	Parameter	APT20M19JVR	UNIT
VDSS	Drain-Source Voltage	200	Volts
ID	Continuous Drain Current @ Tc = 25 °C	112	Amps
IDM	Pulsed Drain Current	448
VGS	Gate-Source Voltage Continuous	±30	Volts
VGSM	Gate-Source Voltage Transient	±40
PD	Total Power Dissipation @ TC = 25	500	Watts
	Linear Derati	4	W/°C
TJ,TSTG	Operating and Storage Junction Temperature Range	-55to 150	°C
TL	Lead Temperature: 0.063" from Case for 10 Sec.	300
IAR	Avalanche Current (Repetitive and Non-Repetitive)	67	Amps
EAR	Repetitive Avalanche Energy	30	mJ
EAS	Single Pulse Avalanche Energy	1300

Parameters:

Technical/Catalog Information	APT20M19JVR
Vendor	Microsemi-PPG
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	112A
Rds On (Max) @ Id, Vgs	19 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	11640pF @ 25V
Power - Max	500W
Packaging	Tube
Gate Charge (Qg) @ Vgs	495nC @ 10V
Package / Case	SOT-227
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	APT20M19JVR APT20M19JVR