APT20M18B2VRG

MOSFET N-CH 200V 100A T-MAX

product image

APT20M18B2VRG Picture
SeekIC No. : 003432622 Detail

APT20M18B2VRG: MOSFET N-CH 200V 100A T-MAX

floor Price/Ceiling Price

US $ 10.74~10.74 / Piece | Get Latest Price
Part Number:
APT20M18B2VRG
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~30
  • Unit Price
  • $10.74
  • Processing time
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/8/14

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Series: POWER MOS V® Manufacturer: Microsemi Power Products Group
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 200V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 100A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 18 mOhm @ 50A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) @ Vgs: 330nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 9880pF @ 25V
Power - Max: 625W Mounting Type: Through Hole
Package / Case: TO-247-3 Variant Supplier Device Package: T-MAX? [B2]    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25° C: 100A
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 330nC @ 10V
Manufacturer: Microsemi Power Products Group
Power - Max: 625W
Series: POWER MOS V®
Package / Case: TO-247-3 Variant
Supplier Device Package: T-MAX? [B2]
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Rds On (Max) @ Id, Vgs: 18 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds: 9880pF @ 25V


Parameters:

Technical/Catalog InformationAPT20M18B2VRG
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C100A
Rds On (Max) @ Id, Vgs18 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds 9880pF @ 25V
Power - Max625W
PackagingTube
Gate Charge (Qg) @ Vgs330nC @ 10V
Package / CaseT-MAX
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names APT20M18B2VRG
APT20M18B2VRG



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Power Supplies - External/Internal (Off-Board)
Test Equipment
Sensors, Transducers
Prototyping Products
DE1
Tapes, Adhesives
803
Crystals and Oscillators
View more