Features: • N-Channel 30V/5A, RDS(ON) =35m(typ.) @ VGS = 10V RDS(ON) =45m(typ.) @ VGS = 4.5V• P-Channel -30V/-5A, RDS(ON) =40m(typ.) @ VGS =-10V RDS(ON) =55m(typ.) @ VGS =-4.5V• Super High Dense Cell Design• Reliable and Rugged• Lead Free Available (RoHS Compliant)App...
APM4536K: Features: • N-Channel 30V/5A, RDS(ON) =35m(typ.) @ VGS = 10V RDS(ON) =45m(typ.) @ VGS = 4.5V• P-Channel -30V/-5A, RDS(ON) =40m(typ.) @ VGS =-10V RDS(ON) =55m(typ.) @ VGS =-4.5V• Su...
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Symbol | Parameter |
N Channel |
P Channel |
Unit | |
VDSS | Drain-Source Voltage |
30 |
-30 |
V | |
VGSS | Gate-Source Voltage |
±16 |
±16 | ||
ID* | Continue Drain Current |
VGS=±10V |
5 |
-5 |
A |
IDM* | 300s Pulsed Drain Current |
20 |
-20 | ||
IS* | Diode Continuous Forward Curren |
1.7 |
-1.7 |
A | |
TJ | Maximum Junction Temperature |
150 |
|||
TSTG | Storage Temperature Range |
-55 to 150 | |||
PD* | Maximum Power Dissipation | TA=25 |
2 |
W | |
TA=100 |
0.8 | ||||
RJA* | Thermal Resistance-Junction to Ambient |
62.5 |
/W |