Features: N-Channel 30V/5A , RDS(ON)= 35m(typ.) @ VGS=10V RDS(ON) =60m(typ.) @ VGS =4.5V P-Channel -30V/-3.55A ,RDS(ON)= 85m(typ.) @ VGS=10V RDS(ON) =135m(typ.) @ VGS =-4.5V Super High Dense Cell Design for Extremely Low R DS(ON) Reliable and Rugged SOP-8 PackageApplicationPower Management in ...
APM4532: Features: N-Channel 30V/5A , RDS(ON)= 35m(typ.) @ VGS=10V RDS(ON) =60m(typ.) @ VGS =4.5V P-Channel -30V/-3.55A ,RDS(ON)= 85m(typ.) @ VGS=10V RDS(ON) =135m(typ.) @ VGS =-4.5V Super High Dense Cel...
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N-Channel
30V/5A , RDS(ON)= 35m(typ.) @ VGS=10V
RDS(ON) =60m(typ.) @ VGS =4.5V
P-Channel
-30V/-3.55A , RDS(ON)= 85m(typ.) @ VGS=10V
RDS(ON) =135m(typ.) @ VGS =-4.5V
Super High Dense Cell Design for Extremely
Low R DS(ON)
Reliable and Rugged
SOP-8 Package
Symbol | Parameter | N-Channel | P-Channel | Unit | |
VDSS | Drain-Source Voltage | 30 | -30 | V | |
VGSS | Gate-Source Voltage | ±25 | ±25 | ||
ID* |
Maximum Drain Current Continuous | 5 | -3.5 | A | |
IDM | Maximum Drain Current Pulsed | 20 | -20 | ||
PD | Maximum Power Dissipation | TA=25°C | 2 | 2 | W |
TA=100°C | 0.8 | 0.8 | |||
TJ | Maximum Junction Temperature | 150 | °C | ||
TSTG | Storage Temperature Range | -55 to 150 | °C | ||
RjA | Thermal Resistance Junction to Ambient | 62.5 | °C /W |