APL502B2G

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Gate Charge (Qg) @ Vgs: -
Drain to Source Voltage (Vdss): 500V
Packaging: Tube
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25° C: 58A
Manufacturer: Microsemi Power Products Group
Input Capacitance (Ciss) @ Vds: 9000pF @ 25V
Package / Case: TO-247-3 Variant
Supplier Device Package: T-MAX? [B2]
Rds On (Max) @ Id, Vgs: 90 mOhm @ 29A, 12V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Power - Max: 730W


Parameters:

Technical/Catalog Information	APL502B2G
Vendor	Microsemi-PPG
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	58A
Rds On (Max) @ Id, Vgs	90 mOhm @ 29A, 12V
Input Capacitance (Ciss) @ Vds	9000pF @ 25V
Power - Max	730W
Packaging	Tube
Gate Charge (Qg) @ Vgs	-
Package / Case	T-MAX
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	APL502B2G APL502B2G APL502B2GMI ND APL502B2GMIND APL502B2GMI