Series: -
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Power - Max: 520W
Manufacturer: Microsemi Power Products Group
Supplier Device Package: ISOTOP?
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25° C: 18A
Rds On (Max) @ Id, Vgs: 600 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) @ Vgs: -
Input Capacitance (Ciss) @ Vds: 7200pF @ 25V
Specifications
| Symbol |
Parameter |
APL1001J |
UNIT |
| VDSS |
Drain-Source Voltage |
1000 |
Volts |
| ID |
Continuous Drain Current @ TC = 25°C |
18 |
Amps |
| IDM, lLM |
Pulsed Drain Current and Inductive Current Clamped |
72 |
| VGS |
Gate-Source Voltage |
±30 |
Volts |
| PD |
Total Power Dissipation @ TC = 25°C |
520 |
Watts |
| Linear Derating Factor |
4.16 |
W/°C |
| TJ,TSTG |
Operating and Storage Junction Temperature Range |
-55 to 150 |
°C |
| TL |
Lead Temperature: 0.063" from Case for 10 Sec. |
300 |
DescriptionThe APL1001J is designed as one kind of N-channel enhancement mode high voltage power MOSFETs with single die ISOTOP package.
Some absolute maximum ratings of APL1001J have been concluded into several points as follow. (1)Its drain to source voltage would be 1000V. (2)Its continuous drain current at Tc=25°C at 18A. (3)Its pulsed drain current and inductive current clamped would be 72A. (4)Its gate to source voltage would be +/-30V. (5)Its total power dissipation at Tc=25°C would be 520W. (6)Its linear derating factor would be 4.16W/°C. (7)Its operating junction temperature range would be from -55°C to 150°C. (8)Its storage temperature range would be from -55°C to 150°C. (9)Its lead temperature 0.063'' from case for 10 seconds would be 300°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.
Also some static electrical characteristics about APL1001J are concluded as follow. (1)Its drain to source breakdown voltage would be min 1000V with conditions of Vgs=0V and Id=250uA. (2)Its on state drain current would be min 18A. (3)Its drain to source on-state resistance would be max 0.6ohms. (4)Its zero gate voltage drain current would be max 25uA at Vds=Vdss and Vgs=0V and would be max 250uA with conditions of Vds=0.8Vdss and Vgs=0V and Tc=125°C. (5)Its gate to source leakage current would be max +/-100nA. (6)Its gate threshold voltage would be min 2V and max 4V. And so on.
And some dynamic characteristics on APL1001J are concluded as follow. (1)Its input capacitance would be typ 6100pF. (2)Its output capacitance would be typ 780pF. (3)Its reverse transfer capacitance would be typ 285pF. (4)Its turn-on delay time would be typ 14ns. (5)Its rise time would be typ 14ns. (6)Its turn-off time would be typ 60ns. (7)Its fall time would be typ 14ns. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!
Parameters: | Technical/Catalog Information | APL1001J |
| Vendor | Microsemi-PPG |
| Category | Discrete Semiconductor Products |
| Mounting Type | Chassis Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 1000V (1kV) |
| Current - Continuous Drain (Id) @ 25° C | 18A |
| Rds On (Max) @ Id, Vgs | 600 mOhm @ 500mA, 10V |
| Input Capacitance (Ciss) @ Vds | 7200pF @ 25V |
| Power - Max | 520W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | - |
| Package / Case | SOT-227 |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | APL1001J
APL1001J
APL1001JMI ND
APL1001JMIND
APL1001JMI
|
APL1001J Data Sheet
