AP9685M

Pinout




Specifications

Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	80	V
VGS	Gate-Source Voltage	± 20	V
ID@TA=25	Continuous Drain Current3	5.3	A
ID@TA=100	Continuous Drain Current3	3.4	A
IDM	Pulsed Drain Current1	50	A
PD@TA=25	Total Power Dissipation	2.5	W
	Linear Derating Factor	0.02	W/
TSTG	Storage Temperature Range	-55 to 150
TJ	Operating Junction Temperature Range	-55 to 150

Description

The Advanced Power MOSFETs AP9685M from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.