Specifications Symbol Parameter Rating Units VDS Drain-Source Voltage 75 V VGS Gate-Source Voltage ±20 V ID@TC=25 Continuous Drain Current, VGS @ 10V3 80 A ID@TC=100 Continuous Drain Current, VGS @ 10V 70 A IDM Pulsed Drain Current1 320 A PD@TC=25 Total Po...
AP95T07GP: Specifications Symbol Parameter Rating Units VDS Drain-Source Voltage 75 V VGS Gate-Source Voltage ±20 V ID@TC=25 Continuous Drain Current, VGS @ 10V3 80 A ID@TC=100 Co...
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Symbol | Parameter | Rating | Units |
VDS | Drain-Source Voltage | 75 | V |
VGS | Gate-Source Voltage | ±20 | V |
ID@TC=25 | Continuous Drain Current, VGS @ 10V3 | 80 | A |
ID@TC=100 | Continuous Drain Current, VGS @ 10V | 70 | A |
IDM | Pulsed Drain Current1 | 320 | A |
PD@TC=25 | Total Power Dissipation | 300 | W |
Linear Derating Factor | 2 | W/ | |
EAS | Single Pulse Avalanche Energy4 | 450 | mJ |
TSTG | Storage Temperature Range | -55 to 175 | |
TJ | Operating Junction Temperature Range | -55 to 175 |
Advanced Power MOSFETs AP95T07GP from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial power applications and suited for low voltage applications such as DC/DC converters.