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AP9452G

Specifications Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±16 V ID@TC=25 Continuous Drain Current, VGS @ 4.5V3 4 A ID@TC=100 Continuous Drain Current, VGS @ 4.5V3 2.5 A IDM Pulsed Drain Current1 12 A PD@TC=25 Total ...

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AP9452G: Specifications Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±16 V ID@TC=25 Continuous Drain Current, VGS @ 4.5V3 4 A ID@TC=100 Co...

AP9452G Data Sheet

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Part Number:
AP9452G
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/24

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Product Details

Description



Specifications

Symbol Parameter Rating Units
VDS Drain-Source Voltage 20 V
VGS Gate-Source Voltage ±16 V
ID@TC=25 Continuous Drain Current, VGS @ 4.5V3 4 A
ID@TC=100 Continuous Drain Current, VGS @ 4.5V3 2.5 A
IDM Pulsed Drain Current1 12 A
PD@TC=25 Total Power Dissipation 1.25 W
  Linear Derating Factor 0.01 W/
TSTG Storage Temperature Range -55 to 150
TJ Operating Junction Temperature Range -55 to 150



Description

The Advanced Power MOSFETs AP9452G from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.


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