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Specifications Parameter Rating Units VDS Drain-Source Voltage 25 V VGS Gate-Source Voltage ±20 V ID @TC = 25°C Continuous Collector Current,VGS @ 10V 62 A ID @TC = 100°C Continuous Collector Current,VGS @ 10V 44 A IDM Pulsed Collector Cur...

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AP72T02GJ: Specifications Parameter Rating Units VDS Drain-Source Voltage 25 V VGS Gate-Source Voltage ±20 V ID @TC = 25°C Continuous Collector Current,VGS @ 10V 62 ...

AP72T02GJ Data Sheet

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Part Number:: AP72T02GJ
Supply Ability:: 5000

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Upload time: 2024/12/25

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AP7201-1010FMG-7 evaluate
US $.16 - .2 / Piece

Low Dropout (LDO) Regulators LDO DUAL 1.9V-6.0V 150MA
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AP7201-1012FMG-7 evaluate
US $.16 - .2 / Piece

Low Dropout (LDO) Regulators LDO DUAL 1.9V-6.0V 150MA

Product Details

Description

Specifications

	Parameter	Rating	Units
V_DS	Drain-Source Voltage	25	V
V_GS	Gate-Source Voltage	±20	V
I_D@T_C = 25°C	Continuous Collector Current,V_GS @ 10V	62	A
I_D @T_C = 100°C	Continuous Collector Current,V_GS @ 10V	44	A
I_DM	Pulsed Collector Current	190	A
P_D @T_C= 25°C	Total Power Dissipation	60	W
	Linear Derating Factor	0.4	W/
E_AS	Single Pulse Avalanche Energy	29	mJ
I_AR	Avalanche Current	24	A
T_JT_STG	Operating Junction and Storage Temperature Range	-55 to + 175	°C

Description

The Advanced Power MOSFETs AP72T02GJ from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP72T02GJ) are available for low-profile applications.

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AP72T02GJ

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