Features: Low On-resistance Single Drive Requirement Surface Mount PackageSpecifications Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source Voltage 30 30 V VGS Gate-Source Voltage ±25 ±25 V ID@TA=25 Continuous Drain Current3 8.8 7.5 A ID@TA=...
AP6982M: Features: Low On-resistance Single Drive Requirement Surface Mount PackageSpecifications Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source Voltage 30 30 V ...
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Symbol | Parameter | Rating | Units | |
N-channel | P-channel | |||
VDS | Drain-Source Voltage | 30 | 30 | V |
VGS | Gate-Source Voltage | ±25 | ±25 | V |
ID@TA=25 | Continuous Drain Current3 | 8.8 | 7.5 | A |
ID@TA=70 | Continuous Drain Current3 | 7 | 6 | A |
IDM | Pulsed Drain Current1 | 30 | 30 | A |
PD@TA=25 | Total Power Dissipation | 2.0 | W/ | |
Total Power Dissipation | 0.016 | W | ||
TSTG | Storage Temperature Range | -55 to 150 | ||
TJ | Operating Junction Temperature Range | -55 to 150 |
The Advanced Power MOSFETs AP6982M from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.