Features: Simple Drive Requirement Low Gate Charge Fast SwitchingSpecifications Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID@TC=25 Continuous Drain Current, VGS @ 10V 45 A ID@TC=100 Continuous Drain Current, VGS @ 10V...
AP60T03AH: Features: Simple Drive Requirement Low Gate Charge Fast SwitchingSpecifications Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID...
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Symbol | Parameter | Rating | Units |
VDS | Drain-Source Voltage | 30 | V |
VGS | Gate-Source Voltage | ±20 | V |
ID@TC=25 | Continuous Drain Current, VGS @ 10V | 45 | A |
ID@TC=100 | Continuous Drain Current, VGS @ 10V | 32 | A |
IDM | Pulsed Drain Current1 | 120 | A |
PD@TC=25 | Total Power Dissipation | 44 | W |
Linear Derating Factor | 0.352 | W/ | |
TSTG | Storage Temperature Range | -55 to 175 | |
TJ | Operating Junction Temperature Range | -55 to 175 |
The Advanced Power MOSFETs AP60T03AH from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP60T03AJ) are available for low-profile applications.