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AP60N03S

Features: Low On-Resistance Fast Switching Simple Drive RequirementSpecifications Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID@TC=25 Continuous Drain Current3 55 A ID@TC=100 Continuous Drain Current3 35 A IDM Pu...

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SeekIC No. : 004286352 Detail

AP60N03S: Features: Low On-Resistance Fast Switching Simple Drive RequirementSpecifications Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ...

AP60N03S Data Sheet

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Part Number:
AP60N03S
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

Low On-Resistance
Fast Switching
Simple Drive Requirement


Specifications

Symbol Parameter Rating Units
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage ±20 V
ID@TC=25 Continuous Drain Current3 55 A
ID@TC=100 Continuous Drain Current3 35 A
IDM Pulsed Drain Current1 215 A
PD@TC=25 Total Power Dissipation 62.5 W
  Linear Derating Factor 0.5 W/
TSTG Storage Temperature Range -55 to 150
TJ Operating Junction Temperature Range -55 to 150



Description

The Advanced Power MOSFETs AP60N03S from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP60N03S) is available for low-profile applications.




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